TEM observation of PL emission sites in SiC.
Identification of defect locations and overall understanding by PL enables detailed observation of defect areas using TEM!
I would like to introduce "TEM observation of PL emission sites in SiC." The basal plane dislocations (BPD) present in SiC substrates are known to amplify defects during forward bias, degrading device characteristics. In this study, we identified small BPDs using photoluminescence (PL) and observed the emission sites with TEM. By identifying defect locations and obtaining an overall view through PL, detailed observation of the defect areas with TEM becomes possible. For more details, please refer to the materials provided. 【Device Overview (Partial)】 ■ PL (Photoluminescence) ■ Equipment used: In-house PL imaging device ■ Excitation light: Ultra-high pressure mercury lamp UV light source (285–350nm) ■ The observation wavelength can be selected based on the type of defects to be captured. *For more information, please download the PDF or feel free to contact us.
- 企業：アイテス
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